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Publications associées (138)

Semiconductor device and method of manufacturing a semiconductor device

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund

The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, wh ...

2009

Carbon-Based Field-Effect Transistors for Nanoelectronics

Klaus Kern, Hagen Klauk, Marko Burghard

In this review, the suitability of the major types of carbon nanostructures as conducting channels of field-effect transistors (FETs) is compared on the basis of the dimensionality and size of their pi-conjugated system. For each of these materials, recent ...

2009

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

Mihai Adrian Ionescu, Katherine Boucart, Walter Riess

This paper reports all-silicon asymmetrically strained Tunnel FET architectures that feature improved subthreshold swing and Ion/I off characteristics. We demonstrate that a lateral strain profile with a maximum of strain higher than 3GPa at the BTB source ...

2009

Scanning gate microscopy measurements on a superconducting single-electron transistor

Nico de Rooij, Kaspar Suter

We present measurements on a superconducting single-electron transistor (SET) in which the metallic tip of a low-temperature scanning force microscope is used as a movable gate. We characterize the SET through charge stability diagram measurements and comp ...

2009

Oscillator Based on Suspended Gate MOS Transistors

Mihai Adrian Ionescu, Marco Mazza, Yogesh Singh Chauhan, Alexandru Rusu

The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An ...

2008

Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation

Christian Enz, Ananda Sankar Roy

Recent studies of Lim et al. have shown that channel engineering can effectively be used to globally improve the device noise performance. This happens because the doping profile can strongly impact the correlation between the drain and induc ...

2008

Prospects for logic-on-a-wire

Giovanni De Micheli, Mihai Adrian Ionescu, David Atienza Alonso, Didier Bouvet, Kirsten Emilie Moselund, Yusuf Leblebici, Mohamed Haykel Ben Jamaa

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

2008

Initialization Mechanism in Kohonen Neural Network Implemented in CMOS Technology

Rafal Tomasz Dlugosz

An initialization mechanism is presented for Kohonen neural network implemented in CMOS technology. Proper selection of initial values of neurons’ weights has a large influence on speed of the learning algorithm and finally on the quantization error of the ...

2008

Global and local charge trapping in carbon nanotube field-effect transistors

Nicola Marzari, Ho Ling Li

The influences of trapped charges on carrier transport in carbon nanotubes (CNTs) are studied using CNT field-effect transistors with a partial top-gate and a global back-gate. Trapped charges induced by the global back-gate voltage sweeping (+/- 20 V) pro ...

2008

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Mihai Adrian Ionescu, Maher Kayal, Didier Bouvet, Kirsten Emilie Moselund, Cédric Meinen, Vincent Pott

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

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