Publications associées à Silicène

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

Thickness-dependent mobility in two-dimensional MoS2

Andras Kis, Adrien Victor Allain, Dominik Sebastian Lembke

Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attrac ...

Royal Soc Chemistry2015

Graphene Field Effect Devices Operating in Differential Circuit Configuration

Davide Sacchetto, Yusuf Leblebici, Clemens Benedict Nyffeler

We study the concept of a basic building block for circuits using differential signaling and being based on graphene field effect devices. We fabricated a number of top-gated graphene FETs using commercially available graphene and employing electron beam l ...

Elsevier2015

Investigation of Interfacial Charge Separation at PbS QDs/ (001) TiO2 Nanosheets Heterojunction Solar Cell

Jacques-Edouard Moser, Lioz Etgar, Elham Ghadiri

In the recent years, the heterojunction solar cells based on quantum dots (QDs) have attracted attention due to strong light absorbing characteristics and the size effect on the bandgap tuning. This paper reports on the kinetics of interfacial charge separ ...

Wiley-Blackwell2015

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose and experimentally demonstrate a novel circuit based on graphene FETs (GFETs) showing excellent negative differential resistance (NDR) characteristics at room temperature. The proposed GNDR circuit exploits a closed loop connection of 1-GFET wit ...

IEEE2015

Functionalized graphene grown by oxidative dehydrogenation chemistry

László Forró, Arnaud Magrez, Endre Horvath, Arnaud Walter, Daniel Oberli, Massimo Spina, Jacim Jacimovic, Laurent Syavoch Bernard

We report on a highly efficient growth of graphene using dehydrogenation of acetylene by an oxidative reaction with carbon dioxide. In few seconds, large-area of copper foil used as catalyst of the reaction is fully covered with graphene. The yield of the ...

Pergamon-Elsevier Science Ltd2014

Tailoring the Magnetism of Co Atoms on Graphene through Substrate Hybridization

Harald Brune, François Patthey, Stefano Rusponi, Marina Pivetta, Jan Gui-Hyon Dreiser, Fabio Donati, Donat Fabian Natterer, Luca Gragnaniello, Quentin Dubout, Alberto Cavallin

We determine the magnetic properties of individual Co atoms adsorbed on graphene (G) with x-ray absorption spectroscopy and magnetic circular dichroism. The magnetic ground state of Co adatoms strongly depends on the choice of the metal substrate on which ...

Amer Physical Soc2014

Functional carbon nanosheets prepared from hexayne amphiphile monolayers at room temperature

Anna Fontcuberta i Morral, Emad Oveisi, Holger Frauenrath, Stephen Schrettl, Javier Reguera Gomez, Riccardo Petraglia, Yannik Fontana, Guillaume Pasche

Carbon nanostructures that feature two-dimensional extended nanosheets are important components for technological applications such as high-performance composites, lithium-ion storage, photovoltaics and nanoelectronics. Chemical functionalization would ren ...

Nature Publishing Group2014

Grain Boundaries in Graphene on SiC(000(1)over-bar) Substrate

Oleg Yazyev, Fernando Gargiulo

Grain boundaries in epitaxial graphene on the SiC(000 (1) over bar) substrate are studied using scanning tunneling microscopy and spectroscopy. All investigated small-angle grain boundaries show pronounced out-of-plane buckling induced by the strain fields ...

Amer Chemical Soc2014

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Silicène

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Thickness-dependent mobility in two-dimensional MoS2

Graphene Field Effect Devices Operating in Differential Circuit Configuration

Investigation of Interfacial Charge Separation at PbS QDs/ (001) TiO2 Nanosheets Heterojunction Solar Cell

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Orbit- and atom-resolved spin textures of intrinsic, extrinsic, and hybridized Dirac cone states

Functionalized graphene grown by oxidative dehydrogenation chemistry

Tailoring the Magnetism of Co Atoms on Graphene through Substrate Hybridization

Functional carbon nanosheets prepared from hexayne amphiphile monolayers at room temperature

Grain Boundaries in Graphene on SiC(000(1)over-bar) Substrate

Graph Chatbot

Chattez avec Graph Search

Orbit- and atom-resolved spin textures of intrinsic, extrinsic, and hybridized Dirac cone states

Graphene Field Effect Devices Operating in Differential Circuit Configuration

Grain Boundaries in Graphene on SiC(000(1)over-bar) Substrate

Thickness-dependent mobility in two-dimensional MoS2

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

Investigation of Interfacial Charge Separation at PbS QDs/ (001) TiO2 Nanosheets Heterojunction Solar Cell

Functionalized graphene grown by oxidative dehydrogenation chemistry

Functional carbon nanosheets prepared from hexayne amphiphile monolayers at room temperature

Tailoring the Magnetism of Co Atoms on Graphene through Substrate Hybridization

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy