Concept
Power semiconductor device
Publications associées (388)
TID and Displacement Damage Effects in Vertical and Lateral Power MOSFETs for Integrated DC-DC Converters
Stefano Michelis, Federico Faccio
TID and displacement damage effects are studied for vertical and lateral power MOSFETs in five different technologies in view of the development of radiation-tolerant fully integrated DC-DC converters. Investigation is pushed to the very high level of radi ...
2010Étude et optimisation d'un convertisseur DC/DC à canaux multiples entrelacés
In a context in which economy and ecology follow historically opposed trajectories, renewable energies appear as an interesting compromise. However, the energy production from these emerging technologies is well below that of their ancestors, and their cos ...
EPFL2010Recent Developments on the EPFL-High Voltage MOSFET Model (EPFL-HVMOS)
Jean-Michel Sallese, François Krummenacher, Antonios Bazigos
We present the latest developments and some preliminary results on High-Voltage MOSFET modelling at EPFL. A novel physics-based compact model is derived for the drift region. It includes velocity saturation and Poisson equation in a self consistent formali ...
2010Single photon detector and associated methods for making the same
Edoardo Charbon, Cristiano Niclass, Marek Gersbach
A semiconductor device includes a semiconductor substrate, a photon avalanche detector in the semiconductor substrate. The photon avalanche detector includes an anode of a first conductivity type and a cathode of a second conductivity type. A guard ring is ...
2010High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
Nicolas Grandjean, Marco Malinverni, Pierre Stadelmann, Denis Martin, Marcel Py, Marcus Gonschorek, Anas Mouti
High mobility Al0.28Ga0.72N/GaN two-dimensional electron gas (2DEG) is achieved on ( 111) oriented single crystal diamond substrate. The surface morphology of the epilayer is free of cracks thanks to the use of an AlN interlayer for strain relaxation. The ...
2010Modeling methodology of high-voltage substrate minority and majority carrier injections
Maher Kayal, Jean-Michel Sallese, Fabrizio Lo Conte
This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation ...
2010Global modeling strategy of parasitic coupled currents induced by minority-carrier propagation in semiconductor substrates
Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte
This paper presents a modeling strategy to simulate the propagation of electrical perturbations induced by direct biasing of substrate junctions. Usually, this is done by identifying parasitic substrate devices such as bipolar transistors. However, mapping ...
2010A circuit-level substrate current model for smart-power ICs
Maher Kayal, Jean-Michel Sallese, François Krummenacher, Marc Pastre, Fabrizio Lo Conte
This paper presents a new modeling methodology accounting for generation and propagation of minority carriers that can be used directly in circuit-level simulators in order to estimate coupled parasitic currents. The method is based on a new compact model ...
Institute of Electrical and Electronics Engineers2010Small signal analysis of electrically-stressed oxides with Poisson-Schroedinger based multiphonon capture model
Alexandre Schmid, Yusuf Leblebici, Davide Garetto
Defects in MOSFET oxides are a major issue in CMOS technologies, affecting not only the device electrical performances but also compromising reliability and endurance. Using Charge-Pumping and C-V measurements, defects have been characterized in native and ...
IEEE Service Center2010Active multi gate micro-electro-mechanical device with built-in transistor
Mihai Adrian Ionescu, Daniel Grogg
The present invention exploits the combination of the amplification, provided by the integration of a FET (or any other three terminal active device), with the signal modulation, provided by the MEM resonator, to build a MEM resonator with built-in transis ...
2010