Wurtzite AlGaN/GaN quantum well (QW) structures were grown by molecular beam epitaxy on c-plane sapphire substrates and the QW transition energies were measured by low temperature photoluminescence. Both the well widths and the Al mole fraction in the AlxGa1-xN(0
Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade
Nicolas Grandjean, Benoît Marie Joseph Deveaud, Raphaël Butté, Gwénolé Jean Jacopin, Wei Liu, Georg Rossbach, Mehran Shahmohammadi, Lise Lahourcade