The cascode is a two-stage amplifier that consists of a common-emitter stage feeding into a common-base stage.
Compared to a single amplifier stage, this combination may have one or more of the following characteristics: higher input–output isolation, higher input impedance, high output impedance, higher bandwidth.
In modern circuits, the cascode is often constructed from two transistors (BJTs or FETs), with one operating as a common emitter or common source and the other as a common base or common gate.
The cascode improves input–output isolation (reduces reverse transmission), as there is no direct coupling from the output to input. This eliminates the Miller effect and thus contributes to a much higher bandwidth.
The use of a cascode (sometimes verbified to cascoding) is a common technique for improving analog circuit performance, applicable to both vacuum tubes and transistors. The name "cascode" was coined in an article written by Frederick Vinton Hunt and Roger Wayne Hickman in 1939, in a discussion on the application of voltage stabilizers. They proposed a cascade of two triodes (the first one with a common cathode setup, the second one with a common grid) as a replacement for a pentode, and so the name may be assumed to be an abbreviation of "casc(aded triode amplifier having characteristics similar to, but less noisy than, a single pent)ode". Cascode circuits were employed in early television sets for the 'front-end' or tuner because of their low noise and wider bandwidth.
Figure 1 shows an example of a cascode amplifier with a common-source amplifier as the input stage driven by a signal source, Vin. This input stage drives a common-gate amplifier as the output stage, with output signal Vout.
As the lower FET conducts it changes the upper FET's source voltage, and the upper FET conducts due to the changed potential between its gate and source.
The major advantage of this circuit arrangement stems from the placement of the upper field-effect transistor (FET) as the load of the input (lower) FET's output terminal (drain).
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The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity between the drain and source. FETs are also known as unipolar transistors since they involve single-carrier-type operation.
A multigate device, multi-gate MOSFET or multi-gate field-effect transistor (MuGFET) refers to a metal–oxide–semiconductor field-effect transistor (MOSFET) that has more than one gate on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET).
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