Deep-level transient spectroscopy (DLTS) is an experimental tool for studying electrically active defects (known as charge carrier traps) in semiconductors. DLTS establishes fundamental defect parameters and measures their concentration in the material. Some of the parameters are considered as defect "finger prints" used for their identifications and analysis.DLTS investigates defects present in a space charge (depletion) region of a simple electronic device. The most commonly used are Schottky diodes or p-n junctions. In the measurement process the steady-state diode reverse polarization voltage is disturbed by a voltage pulse. This voltage pulse reduces the electric field in the space charge region and allows free carriers from the semiconductor bulk to penetrate this region and recharge the defects causing their non-equilibrium charge state. After the pulse, when the voltage returns to its steady-state value, the defects start to emit trapped carriers due to the thermal emission p
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The Schottky diode (named after the German physicist Walter H. Schottky), also known as Schottky barrier diode or hot-carrier diode, is a semiconductor diode formed by the junction of a semiconducto
A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. The "p" (positive) side contains an excess of hol
In the solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Car
The course presents the detection of ionizing radiation in the keV and MeV energy ranges. Physical processes of radiation/matter interaction are introduced. All steps of detection are covered, as well as detectors, instrumentations and measurements methods commonly used in the nuclear field.