Parasitic capacitance | EPFL Graph Search

Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists between the parts of an electronic component or circuit simply because of their proximity to each other. When two electrical conductors at different voltages are close together, the electric field between them causes electric charge to be stored on them; this effect is capacitance. All practical circuit elements such as inductors, diodes, and transistors have internal capacitance, which can cause their behavior to depart from that of ideal circuit elements. Additionally, there is always some capacitance between any two conductors; this can be significant with closely spaced conductors, such as wires or printed circuit board traces. The parasitic capacitance between the turns of an inductor or other wound component is often described as self-capacitance. However, in electromagnetics, the term self-capacitance more correctly refers to a different phenomenon: the capacitance of a conductive object wi

Capacitive sensor to monitor the level of drug inside an injector pen

Sylvain Paul Fernand Joly

Diabete is a disease which is spreading faster than ever, impacting now a larger population. Patients suffering from this disease need the injection of insulin to control extracellular sugar levels. Pharmaceutical companies developed injector pens to allow patients to inject themself the right amount of drug. But the dosage depends on many parameters as the previous meal, current blood sugar level... and a wrong dosage can lead to health problem e.g., loss of conciousness at short terms and severe diseases like cardiac pathologies at long terms... To prevent these situations, a smart pen cap has been developed at Valtronic Technologies to follow and log the individual injections by measuring the level of drug in the pen, the temperature, and the relative humidity to allow the patient and the medical staff to have an history of the injections and the climatic conditions.Injector pen and smart pen cap have been firstly presented with a non-exhaustive list of different physics which can be used to measure a level of liquid. For need of precision, the capacitance technique is the best technology choice. Therefore, the smart pen cap is based on a capacitive sensor. Different capacitance converter topologies have been compared through a bibliographic study. It appears that the Lock-in converter gives the best sensitivity and Charge Sensitivity Amplifier has the lowest power consumption. A trade-of was to use a capacitance-to-digital-converter. A chip from Analog device has been selected due to its high resolution below the femto-farad level, its simple interface and its availability on the market which allows a fast development and industrialisation. Then, switch and electronic structure are presented. First tests with an empty device have been conducted to find the noise floor, which is below 0.1fF.Subsequently, a study of different electrodes configuration has been performed. Firstly, an analysis on two parallel flat electrodes has been conducted using theoretical and simulation approaches. Then, two semi-cylindrical electrodes have been analysed. A comparison has been made between two theoretical methods which are: considering an infinite number of parallel flat electrodes following the shape of the semi-cylindrical electrodes and the conformal mapping methods. This last method gives coherent results when comparing real measurements and simulation. The device is equipped with semi-cylindrical electrodes which allow for a small package and a good correlation between capacitance and drug level with a convertion slope of 0.5fF/µL. Tests have been performed which give an error of +-1 IU and +-4 IU for large injection (set point equal to 72 IU).Finally, the study of some parasitic effects is presented in the last section. An important effect is the climatic effect which affects the capacitance due to variation of electric permittivity linked to temperature change and water absorption of certain materials as plastics. To compensate for this effect, reference electrodes and a climatic sensor have been implemented. Another important effect comes from the cartridge position in the non-uniform electric field of the smart pen cap. A four electrodes device has been realized to allow a perpendicular rotation of the electric field to obtain a more constant averaged electric field. As a consequence, the position impact of the cartridge has been reduced. Other effects have been considered. The device can detect a minimum injection of 52uL.

EPFL2021

Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films

Andreas Nöth

Thin Film Bulk Acoustic Wave Resonators (TFBARs) had been developed a decade ago and since then were implemented extensively in mobile communications devices. The "heart" of a TFBAR consists of a piezoelectric film that operates as an acousto-electric transducer, stabilizing the transmission at a given predetermined frequency. For reasons such as space economy in hand-held devices, it is of interest to make these TFBARs tunable, so that a single TFBAR is multi-band responsive. This thesis demonstrates for the first time electrically tunable, single-component TFBARs. A theory describing the tuning behavior of dc bias induced acoustic resonances was developed. Then we made the hypothesis that dc bias induced piezoelectric BaxSr1-xTiO3 (BST) thin films – namely, paraelectric, non-piezoelectric films operating under dc bias – can be used to make electrically tunable TFBARs and that the devices can be switched on or off depending on the dc bias state. The devices were then fabricated: We integrated BST lms onto silicon substrates, micromachined the substrate to create the TFBARs and a new type of suspended planar capacitor which were then characterized, analyzed, and modeled, demonstrating successfully the new concept: We developed a theory describing the electrical tuning behavior of the dc bias induced acoustic resonances in paraelectric thin lms in terms of material parameters. The field dependent constitutive piezoelectric equations were derived from the Landau free energy P-expansion by taking the linear and nonlinear electrostrictive terms as well as the background permittivity into account. We considered two modes of excitation for the tuning of the acoustic resonances, namely the thickness excitation (TE) mode and the lateral field excitation (LFE) mode. The tuning behavior of the two types of resonators based on BST thin films was modeled and discussed. For the modeling we calculated the relevant tensor components controlling the tuning of the BST resonators from the available literature data. The fabrication of the membrane-type TFBARs was realized by integrating BST thin films onto silicon substrates and using micromaching technologies. We showed that the developed TFBARs can be switched on or off with a dc bias. At a dc electric field of 615 kV/cm we observed a tuning of -2.4% (-66 MHz) and -0.6% (-16 MHz) for the resonance and antiresonance frequencies of the device, while the resonance frequency at a dc electric field extrapolated to 0 kV/cm was 2.85 GHz. The effective electromechanical coupling factor k2eff of the device increased up to 4.4%. The tuning was non-hysteretic. The Quality-factor (Q-factor) of the device was about 200. The developed micromaching processes for the TFBARs were used to fabricate coplanar BST capacitors on silicon. Micromaching was used to remove the Si substrate under the active area of the device. Comparing this new micromachined coplanar capacitor with conventional non-micromachined capacitors, we demonstrated that the removal of the substrate from the active device area resulted in a reduction of parasitic effects. The micromachined coplanar capacitor showed an increased tunability and a reduced loss tangent in comparison to the non-micromachined capacitor. The micromachined capacitor showed a relative tunability of 37% at a dc electric field of 1100 kV/cm. The loss tangent was 0.08 and 0.06 at zero and maximum dc bias, respectively, at a measurement frequency of 20 GHz. The integration of epitaxial BST thin films on silicon was studied as well because of its potential improvement of the device performance in comparison to devices based on polycrystalline films. Two different electrode/buffer layer systems, YBa2Cu3O7-x (YBCO) / CeO2 / YxZr1-xO2-x/2 (YSZ) and TiN were used for the integration. Epitaxial BST thin films were grown with both structures. For the BST / YBCO / CeO2 / YSZ / Si structure, the BST unit cell was rotated by 45° in the in-plane dimension with respect to the substrate. The BST layer exhibited good structural quality as indicated by a Full Width at Half Maximum (FWHM) of 0.5° of the rocking curve of the BST(002) diffraction peak. For the BST / TiN / Si structure, the BST layer was grown with a cube-on-cube epitaxial relationship on the silicon substrate, thus demonstrating epitaxially grown BST on silicon using conventional bottom electrode that is easily acceptable by the microelectronic industry. However, in this case, the structural quality of the BST layer was reduced in comparison to the BST / YBCO / CeO2 / YSZ / Si structure. The FWHM of the rocking curve of the BST(002) diffraction peak was 2.2°. We established the temperature (T=550 to 600 °C) and pressure (p ≈ 10-7 to 5 × 10-4 Torr) conditions for the growth of epitaxial BST thin films on TiN-buffered Si. At too high temperatures and/or oxygen pressures epitaxial BST thin film growth was impeded due to the oxidation of the TiN layer. By introducing experimental results from the electrical characterization of the micromachined devices with the polycrystalline BST into our developed theory, we could successfully model the tuning behavior of our fabricated TFBARs. The modeling allowed us to de-embed the intrinsic electromechanical properties of a freestanding BST layer. The effect of increasing mechanical load on the tuning performance of the device was modeled and studied experimentally. Under strong mechanical load, the tuning of both resonance and antiresonance frequency was reduced. The effect was attributed to a reduction in the tuning of k2eff of the device and of the sound velocity of the BST layer.

EPFL2009

27.2 An Adiabatic Sense and Set Rectifier for Improved Maximum-Power-Point Tracking in Piezoelectric Harvesting with 541% Energy Extraction Gain

Yimai Peng

Piezoelectric energy harvesters (PEHs) convert mechanical energy from vibrations into electrical energy. They have become popular in energy-autonomous IoT systems. However, the total energy extracted by a PEH is highly sensitive to matching between the PEH impedance and the energy extraction circuit. Prior solutions include the use of a full-bridge rectifier (FBR) and a so-called synchronous electric-charge extraction (SECE) [1], and are suitable for non-periodic vibrations. However, their extraction efficiency is low since the large internal capacitance C p (usually 10's of nF) of the PEH (Fig. 27.2.1) prevents the output voltage from reaching its maximum power point (MPP) under a typical sinusoidal and transient excitation (V MPP = 1/2·I p R p ). A recently proposed technique [2,3,4], called bias-flip, achieves a higher extraction efficiency by forcing a predetermined constant voltage at the PEH output, V p , which is then flipped every half-period of the assumed sinusoidal excitation (Fig. 27.2.1, top left). To flip V p , the energy in capacitor C p is extracted using either a large external inductor [2,3] or capacitor arrays [4]. It is then restored with the opposite polarity (Fig. 27.2.1, top). However, V MPP of the PEH varies with sinusoidal current I p ; hence, the two fixed values of V p in the flip-bias technique either over or underestimate V MPP for much of the oscillation cycle (pattern filled regions in Fig. 27.2.1, top right). In addition, none of the prior approaches compensate for V MPP -waveform amplitude changes, due to input intensity variations or decaying oscillations after an impulse, further degrading efficiency.